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MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
N ? Channel SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc ? dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
http://onsemi.com
2 AMPERES, 25 VOLTS
R DS(on) = 100 m W
N ? Channel
D
Discrete
(Pb ? Free)
G
?
?
?
?
?
?
?
?
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive ? Can Be Driven by Logic ICs
Miniature SO ? 8 Surface Mount Package ? Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
I DSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO ? 8 Package Provided
This is a Pb ? Free Device
8
1
S
SO ? 8
CASE 751
STYLE 11
8
1
MARKING
DIAGRAM
F2N02
AYWW G
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
F2N02 = Device Code
A = Assembly Location
Y = Year
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
V DSS
V GS
I D
I D
I DM
25
± 20
3.6
2.5
18
Vdc
Vdc
Adc
Apk
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Total Power Dissipation @ T A = 25 ° C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C (V DD = 20 Vdc,
V GS = 10 Vdc, Peak I L = 9.0 Apk,
L = 6.0 mH, R G = 25 W )
P D
T J , T stg
E AS
2.0
? 55 to 150
245
W
° C
mJ
Source ? 1
Gate ? 1
Source ? 2
Gate ? 2
1
2
3
4
8
7
6
5
Drain ? 1
Drain ? 1
Drain ? 2
Drain ? 2
Thermal Resistance, Junction ? to ? Ambient
(Note 1)
R q JA
62.5
° C/W
ORDERING INFORMATION
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 0.0625 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided) with
one die operating, 10 sec. max.
Device Package Shipping ?
MMDF2N02ER2G SO ? 8 2500 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 8
1
Publication Order Number:
MMDFN02E/D
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